Growth of large diameter pure phase wurtzite GaP nanowires by a two-step axial-radial growth approach
Author:
Affiliation:
1. Electrical Engineering Faculty, Technion Israel Institute of Technology, Haifa 32000, Israel
2. Physics Department and Solid State Institute, Technion–Israel Institute of Technology, 32000 Haifa, Israel
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5020425
Reference17 articles.
1. Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures
2. Predicted band structures of III-V semiconductors in the wurtzite phase
3. Direct Band Gap Wurtzite Gallium Phosphide Nanowires
4. Exploring Crystal Phase Switching in GaP Nanowires
5. Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
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