Crack propagation in low dislocation density quantum dot lasers epitaxially grown on Si
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
Defense Advanced Research Projects Agency
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0077199
Reference29 articles.
1. Perspective on the future of silicon photonics and electronics
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5. All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)
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