Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3589965
Reference19 articles.
1. New selective molecular-beam epitaxial growth method for direct formation of GaAs quantum dots
2. Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy
3. Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy
4. Structure of quantum dots as seen by excitonic spectroscopy versus structural characterization: Using theory to close the loop
5. Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer
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1. Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots;Light: Science & Applications;2021-06-15
2. Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study;Physical Review B;2021-03-03
3. Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy;Nanomaterials;2021-02-10
4. Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots;Nanomaterials;2021-01-03
5. Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates;Nanomaterials;2020-09-14
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