Zinc diffusion in III‐V semiconductors using a cubic‐zirconia protection layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345688
Reference17 articles.
1. A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGaAs
2. Open tube diffusion of Zn into AlGaAs and GaAs
3. Open‐tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model
4. Improved shallowp+diffusion into InGaAsP by a new spin‐on diffusion source
5. An Open‐Tube Method for Diffusion of Zinc into GaAs
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1. Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition;Inorganic Materials;2004-08
2. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
3. Preparation of p-type GaAs layers for ohmic contact;Journal of Materials Science: Materials in Electronics;1995-04
4. High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping;IEEE Journal of Quantum Electronics;1991-06
5. 3 Diffusion in compound semiconductors - References;Diffusion in Semiconductors
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