Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor-Reference-Cited by-同舟云学术

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Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor

Published:2020-06-01 Issue:6 Volume:10 Page:065215
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Ochi Ryota¹^ORCID,Maeda Erika²³,Nabatame Toshihide³,Shiozaki Koji⁴,Sato Taketomo¹^ORCID,Hashizume Tamotsu¹⁴

Affiliation:

1. Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-0813, Japan

2. Shibaura Institute of Technology, Tokyo 135-8548, Japan

3. International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

4. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8601, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0012687

Reference26 articles.

1. An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

2. Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors

3. Insulated gate and surface passivation structures for GaN-based power transistors

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors;Electronics;2024-07-15

2. Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors;Energies;2023-03-24

3. Investigation of Metal Oxide Film by Atomic Layer Deposition for Electronic Device;Journal of The Surface Finishing Society of Japan;2023-03-01

4. Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors;Materials Today Physics;2023-02

5. Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications;Lecture Notes in Electrical Engineering;2022-09-12

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