Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements
Author:
Affiliation:
1. Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
2. OSRAM Opto Semiconductors GmbH, Leibnizstraße. 4, 93055 Regensburg, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5022026
Reference58 articles.
1. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
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4. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
5. GaN-Based p–n Junction Blue-Light-Emitting Devices
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