Application of Taguchi method in optimization of structural parameters in self-switching diode to improve the rectification performance

Author:

Zakaria N. F.,Kasjoo S. R.,Isa M. M.,Zailan Z.,Mokhar M. B. M.,Juhari N.

Publisher

AIP Publishing

Reference16 articles.

1. 150 GHz Complementary Anti-Parallel Diode Frequency Tripler in 130 nm CMOS

2. H. Minamide, “Development of high-power terahertz-wave sources for finding novel applications”, IEEE Transactions on Terahertz Science and Technology 5.6 (2015): 1104–1109.

3. InGaAs-based planar barrier diode as microwave rectifier

4. N. F. Zakaria et al., “Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation”, 2016 5th International Symposium on Next-Generation Electronics (ISNE). IEEE, 2016.

5. S. R. Kasjoo et al., “An overview of self-switching diode rectifiers using green materials”, AIP Conference Proceedings. Vol. 1885. No. 1. AIP Publishing, 2017.

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