Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations-Reference-Cited by-同舟云学术

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Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations

Published:1998-03-23 Issue:12 Volume:72 Page:1424-1426
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Flatté Michael E.,Grein C. H.,Ehrenreich H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120583

Reference9 articles.

1. Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well

2. Theoretical performance of InAs/ InxGa1−xSb superlattice‐based midwave infrared lasers

3. Theoretical performance limits of 2.1–4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers

4. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

5. Photo-electronic properties of InAs0.07Sb0.93 films

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