V‐grooved substrate buried heterostructure InGaAsP/InP laser by one‐step epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331064
Reference10 articles.
1. Room‐temperature cw operation of buried‐stripe double‐heterostructure GaInAsP/InP diode lasers
2. Long Wavelength InGaAsP/InP Lasers for Optical Fiber Communication Systems
3. InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region
4. Oscillation characteristics in InGaAsP/InP DH lasers with self-aligned structure
5. InGaAsP/InP buried crescent laser emitting at 1.3 μm with very low threshold current
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1. Single-step growth of InGaAsP/InP laser array on patterned InP substrate;Physica E: Low-dimensional Systems and Nanostructures;2004-07
2. High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm;Materials Science and Engineering: B;1994-12
3. Laser Structures and Their Performance;Semiconductor Lasers;1993
4. Electro‐optical effects of externally applied 〈100〉 uniaxial stress on InGaAsP 1.3 and 1.5 μm injection lasers;Applied Physics Letters;1988-05-02
5. Controlled Undercutting of V‐Groove Channels for InP by Photoresist Etch Mask;Journal of The Electrochemical Society;1988-05-01
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