High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm-Reference-Cited by-同舟云学术

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High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm

Published:1994-12 Issue:1-3 Volume:28 Page:296-298
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Rakovics V.,Serényi M.,Koltai F.,Püspöki S.,Lábadi Z.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. CW room-temperature blue upconversion fibre laser

2. Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength

3. Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate

4. V‐grooved substrate buried heterostructure InGaAsP/InP laser by one‐step epitaxy

5. Proc. Fifth Int. Conf. on InP and Related Compounds;Rakovic,1994

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-step growth of InGaAsP/InP laser array on patterned InP substrate;Physica E: Low-dimensional Systems and Nanostructures;2004-07

2. A high-sensitivity, near-infrared tunable-diode-laser-based photoacoustic water-vapour-detection system for automated operation;Measurement Science and Technology;1999-09-30

3. Intracavity photoacoustic gas detection with an external cavity diode laser;Applied Physics B Laser and Optics;1996-10

4. Laser diode pump sources for blue up-conversion fibre laser;Semiconductor Science and Technology;1996-10-01

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