Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption
Author:
Affiliation:
1. Naval Research Laboratory, 4555 Overlook Ave., Washington, DC 20375, USA
2. Sotera Defense Solutions, Herndon, Virginia 20171, USA
3. University of Dallas, Irving, Texas 75062, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5001935
Reference39 articles.
1. Progress in silicon carbide semiconductor electronics technology
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4. S. Hazra , A. De , and S. Bhattacharya , in 2014 International Power Electronics Conference, Hiroshima (2014), p. 3447.
5. 27 kV, 20 A 4H-SiC n-IGBTs
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