Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations-Reference-Cited by-同舟云学术

Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations

Published:2022-12-16 Issue: Volume: Page:2200449
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Galeckas Augustinas¹^ORCID,Karsthof Robert¹^ORCID,Gana Kingsly¹,Kok Angela²^ORCID,Bathen Marianne Etzelmüller³^ORCID,Vines Lasse¹^ORCID,Kuznetsov Andrej¹^ORCID

Affiliation:

1. Department of Physics Centre for Material Science and Nanotechnology University of Oslo PO Box1048, Blindern NO-0316 Oslo Norway

2. SINTEF MiNaLab SINTEF Blindern NO-0373 Oslo Norway

3. Advanced Power Semiconductor Laboratory ETH Zürich Physikstrasse 3 8092 Zürich Switzerland

Funder

Norges Forskningsråd

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200449

Reference29 articles.

1. Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

2. Negative-USystem of Carbon Vacancy in4H-SiC

3. Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

4. Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

5. High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

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