Simultaneous formation of a shallow siliconp‐njunction and a shallow silicide/silicon ohmic contact by an ion implantation technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93683
Reference12 articles.
1. Refractory silicides for integrated circuits
2. Reaction kinetics of tungsten thin films on silicon (100) surfaces
3. Reaction kinetics of molybdenum thin films on silicon (111) surface
4. Fabrication and Thermal Stability of W‐Si Ohmic Contacts
5. Ion‐beam‐induced modification of silicide formation in rare‐earth metals: Er‐Si and Tb‐Si systems
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1. Reactions with Silicon;W Tungsten;1993
2. The reaction of ion-beam mixed titanium layers on silicon induced by electron beam heating;Semiconductor Science and Technology;1989-11-01
3. The structural and electrical properties of ion-beam mixed tungsten silicides;Vacuum;1989-01
4. Ion Implantation in Tungsten Layers;Journal of The Electrochemical Society;1987-12-01
5. Ti Silicide formation using as ion beam mixing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01
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