Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111135
Reference13 articles.
1. Electrical tunability of infrared detectors using compositionally asymmetric GaAs/AlGaAs multiquantum wells
2. Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−xbarriers
3. Photovoltaic intersubband detectors for 3-5 mu m using GaAs quantum wells sandwiched between AlAs tunnel barriers
4. Mid‐infrared detectors in the 3–5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structures
5. Two‐color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells
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