Inter-subband Photoresponse Analysis of CdS/ZnSe QWIP-Reference-Cited by-同舟云学术

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Inter-subband Photoresponse Analysis of CdS/ZnSe QWIP

Published:2021 Issue: Volume: Page:417-424
ISSN:2367-3370
Container-title:Advances in Smart Communication Technology and Information Processing
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Author:

Billaha Md Aref,Bhowmick Biplab,Choudhary Santosh Kumar

Publisher

Springer Singapore

Link

http://link.springer.com/content/pdf/10.1007/978-981-15-9433-5_40

Reference25 articles.

1. Shen, A.: Molecular beam epitaxy-grown wide band gap II-VI semiconductors for intersubband device applications. Mol. Beam Epitaxy 15, 327–341 (2018)

2. Lee, W.-J., Umana-Membreno, G.A., Dell, J., Faraone, L.: Effect of CdS processing conditions on the properties of CdS/Si diodes and CdS/CdTe thin-film solar cells. IEEE J. Photovolt. 5(6), 1783–1790 (2015)

3. Sfina, N., Abdi-Ben Nasrallah, S., Mnasri, S., Said, M.: Absorption coefficient of intersubband transition at 1.55 μm in (CdS/ZnSe)/BeTe quantum wells. J. Phys. D Appl. Phys. 42, 045101 (2009)

4. Xia, Y.N., Yang, P.D., Sun, Y.G., Wu, Y.Y., Mayers, B., Gates, B., Yin, Y.D., Kim, F., Yan, H.Q.: One- dimensional nanostructures: synthesis, characterization, and applications. Adv. Mater. 15, 353–389 (2003)

5. Deng, K., Li, L.: CdS nanoscale photodetectors. Adv. Mater. 26, 2619–2635 (2014)

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