The energy band alignment of Xc, Γc, and Γv points in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364064
Reference15 articles.
1. Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers
2. Effect of substrate orientation on Zn-doping of AIGalnP grown by atmospheric pressure orgamometallic vapor phase epitaxy
3. Analysis of recombination centers in (AlxGa1−x)0.5In0.5P quaternary alloys
4. Study on photoluminescence and Raman scattering of GaInP and AlInP grown by organometallic vapor‐phase epitaxy
5. Atomic arrangement of spontaneously orderedAl0.5In0.5P/GaAs
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1. Determination of the direct to indirect bandgap transition composition in AlxIn1−xP;Journal of Applied Physics;2013-11-28
2. Amber-green light-emitting diodes using order-disorder AlxIn1−xP heterostructures;Journal of Applied Physics;2013-08-21
3. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates;Journal of Applied Physics;2013-05-14
4. Accurate ab initio predictions of III–V direct-indirect band gap crossovers;Applied Physics Letters;2010-08-30
5. GaInP–AlInP–GaAs Blue Photovoltaic Detectors With Narrow Response Wavelength Width;IEEE Photonics Technology Letters;2010-06
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