Minority‐carrier lifetime measurements and defect‐structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy-Reference-Cited by-同舟云学术

Minority‐carrier lifetime measurements and defect‐structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy

Published:1988-12 Issue:11 Volume:64 Page:6259-6263
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Timmons M. L.,Ahrenkiel R. K.,Al‐Jassim M. M.,Dunlavy D. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.342084

Reference9 articles.

1. SINGLE‐CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES

2. The Use of Metal-Organics in the Preparation of Semiconductor Materials

3. Heteroepitaxial GaAs on Aluminum Oxide: Electrical Properties of Undoped Films

4. The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates

5. Recollections and reflections of MO-CVD

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1. Improved solid phase epitaxial growth of lithium tantalate thin films on sapphire, using a two‐step metalorganic chemical‐vapor deposition process;Applied Physics Letters;1993-11-08

2. Solid‐phase epitaxial growth of lithium tantalate thin films deposited by spray‐metalorganic chemical vapor deposition;Applied Physics Letters;1993-07-19

3. Growth and properties of thin GaAs epitaxial layers on Al2O3;Journal of Applied Physics;1990-05-15

4. Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates;Applied Physics Letters;1989-04-24