Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface-Reference-Cited by-同舟云学术

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Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Published:2013-02-18 Issue:7 Volume:102 Page:074106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Handong,Gao Lei,Li Hui,Wang Gaoyun,Wu Jiang,Zhou Zhihua,Wang Zhiming

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4792237

Reference24 articles.

1. A tunable topological insulator in the spin helical Dirac transport regime

2. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

3. Control over topological insulator photocurrents with light polarization

4. Bulk Fermi surface coexistence with Dirac surface state inBi2Se3: A comparison of photoemission and Shubnikov–de Haas measurements

5. Strong surface scattering in ultrahigh-mobilityBi2Se3topological insulator crystals

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