Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films
Author:
Affiliation:
1. Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
2. Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
Funder
Mitsubishi Foundation
China Scholarship Council
Asahi Glass Foundation
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5054154
Reference37 articles.
1. Handbook of Transparent Conductors
2. Transparent Oxide Electronics
3. High Mobility in a Stable Transparent Perovskite Oxide
4. Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature
5. Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon
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