Interdiffused InAs∕InGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2743088
Reference22 articles.
1. Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
2. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
3. Room-temperature operation of InAs quantum-dash lasers on InP [001]
4. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
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2. Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy;Journal of Applied Physics;2014-03-28
3. Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy;Journal of Applied Physics;2011-09-15
4. Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies;Journal of Physics: Conference Series;2010-11-01
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