Orientation dependent reactive ion etching of GaAs in SiCl4
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95406
Reference21 articles.
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5. A 3.8 μm Period Sawtooth Grating in InP by Anisotropic Etching
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