Charge transport in HfO2 due to multiphonon traps ionization mechanism in SiO2/HfO2 stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4775407
Reference23 articles.
1. Limitations of Poole–Frenkel Conduction in Bilayer $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ MOS Devices
2. High-temperature conduction behaviors of HfO2/TaN-based metal-insulator-metal capacitors
3. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals
4. SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method
5. Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
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2. Short-range order and charge transport in silicon-rich pyrolytic silicon oxynitride;Journal of Non-Crystalline Solids;2023-01
3. Multiphonon trap ionization mechanism in amorphous SiNx;Journal of Non-Crystalline Solids;2022-04
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5. Charge Transport in Amorphous Silicon Nitride;Journal of Experimental and Theoretical Physics;2021-10
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