Local oxidation induced dislocation generation near [100] Si3N4film edges
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94248
Reference7 articles.
1. Dislocation propagation and emitter edge defects in silicon wafers
2. Influence of film stress and thermal oxidation on the generation of dislocations in silicon
3. Framed Recessed Oxide Scheme for Dislocation‐Free Planar Si Structures
4. Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO2 Films
5. Generation Mechanism of Dislocations in Local Oxidation of Silicon
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1. Effect of rapid thermal annealing on bulk micro-defects and plastic deformation in silicon during high temperature processing;Materials Science in Semiconductor Processing;2018-10
2. Jan Vanhellemont - 35 years of materials research in microelectronics;physica status solidi (c);2016-06-03
3. Effect of crystallographic alignment of isolation trenches: A resolved‐shear‐stress perspective;Applied Physics Letters;1992-08-17
4. Stress‐related problems in silicon technology;Journal of Applied Physics;1991-09-15
5. Film‐edge‐induced dislocation generation in silicon substrates. II. Application of the theoretical model for local oxidation processes on (001) silicon substrates;Journal of Applied Physics;1987-03-15
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