Room‐temperature electron diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92625
Reference9 articles.
1. Vapor-phase growth of (In,Ga)(As,P) quaternary alloys
2. Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
3. Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate
4. Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid‐phase epitaxy
5. Diffusion lengths in amphoteric GaAs heteroface solar cells
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