Electronic properties in Ga‐doped CdTe layers grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Electronic properties in Ga‐doped CdTe layers grown by metalorganic vapor phase epitaxy

Published:1992-10-15 Issue:8 Volume:72 Page:3406-3409
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ekawa Mitsuru,Yasuda Kazuhito,Ferid Touati,Saji Manabu,Tanaka Akikazu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.351412

Reference12 articles.

1. Extrinsic p-doped HgCdTe grown by direct alloy growth organometallic epitaxy

2. p‐i‐nHgCdTe photodiodes grown by molecular beam epitaxy

3. The growth and properties of In-doped metalorganic vapor phase epitaxy interdiffused multilayer process (HgCd)Te

4. Properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy

5. Segregation coefficients and activation of indium in cadmium telluride grown from tellurium-rich melt by the Bridgman technique

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

2. Growth characteristics of (100)HgCdTe layers in low-temperature MOVPE with ditertiarybutyltelluride;Journal of Crystal Growth;1996-09

3. Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy;Journal of Electronic Materials;1995-09

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