Impact of B-doping on topological Hall resistivity in (111)- and (110)-oriented Mn<sub>4</sub>N single layers with the non-collinear spin structure-Reference-Cited by-同舟云学术

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Impact of B-doping on topological Hall resistivity in (111)- and (110)-oriented Mn₄N single layers with the non-collinear spin structure

Published:2022-02-21 Issue:7 Volume:131 Page:073904
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Isogami Shinji¹^ORCID,Ohtake Mitsuru²^ORCID,Takahashi Yukiko K.¹^ORCID

Affiliation:

1. Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan

2. Faculty of Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya, Yokohama, Kanagawa 240-8501, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0083042

Reference40 articles.

1. Preparation and magnetic properties of Mn4N films by reactive facing targets sputtering

2. Anomalous perpendicular magnetoanisotropy in Mn4N films on Si(100)

3. Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates

4. Perpendicular magnetic anisotropy of Mn4N films fabricated by reactive sputtering method

5. Contributions of magnetic structure and nitrogen to perpendicular magnetocrystalline anisotropy in antiperovskite ɛ−Mn4N

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1. Intrinsic origin and enhancement of topological responses in ferrimagnetic antiperovskite Mn4N;Physical Review B;2024-01-29

2. High‐Throughput Exploration of Phase Evolution in (Pb_1−XBa_X)ZrO₃ Thin Films;Advanced Electronic Materials;2024-01-12

3. Optimal design of Cs<sub>2</sub>AgBi<sub>0.75</sub>Sb<sub>0.25</sub>Br<sub>6</sub> perovskite solar cells;Acta Physica Sinica;2024

4. Accelerating the combinatorial optimization process for phosphor materials by Bayesian optimization;Japanese Journal of Applied Physics;2023-11-01

5. Fabrication of highly oriented Mn4N/Pt epitaxial bilayer structure on MgO(001) for spintronics applications;AIP Advances;2023-10-01

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