Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2160708
Reference24 articles.
1. Electron spin resonance in electron‐irradiated 3C‐SiC
2. Metastable defects in 6H–SiC: experiments and modeling
3. Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC
4. Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
5. Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theory of the Thermal Stability of Silicon Vacancies and Interstitials in 4H–SiC;Crystals;2021-02-08
2. Isothermal annealing study of the EH1 and EH3 levels in n-type 4H-SiC;Journal of Physics: Condensed Matter;2020-08-25
3. Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC;Journal of Physics D: Applied Physics;2012-10-16
4. Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC;Journal of Applied Physics;2011-05-15
5. Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition;Physica B: Condensed Matter;2007-03
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