Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy-Reference-Cited by-同舟云学术

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Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

Published:2002-04-22 Issue:16 Volume:80 Page:2875-2877
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sato Tadashige,Imai Megumi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1473693

Reference6 articles.

1. Vapor phase epitaxial materials for LED applications

2. The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

3. Optimization of Electroluminescent Efficiencies for Vapor-Grown GaAs[sub 1−x]P[sub x] Diodes

4. High-efficiency GaP green LED's by Zinc diffusion into an n-LPE layer

5. Degradation of Se-Doped GaAs0.6P0.4Light-Emitting Diodes

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