Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3456561
Reference16 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
3. AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz
4. Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN
5. Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model
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2. High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications;ECS Journal of Solid State Science and Technology;2023-07-01
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4. Enhancement in Analog/RF and Power Performance of Underlapped Dual-Gate GaN-Based MOSHEMTs with Quaternary InAlGaN Barrier of Varying Widths;Journal of Electronic Materials;2021-11-21
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