Vibrational distributions of As2 in the cracking of As4 on Si(100) and Si(111)
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.463639
Reference18 articles.
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3. On the possibility of two-dimensional growth of GaAs on atomically flat Si(100) surfaces
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5. Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface
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1. Three-dimensional Strain Relaxation in the As/Si (001)-(2×1) Surface;Japanese Journal of Applied Physics;2002-01-15
2. Laser-Induced Fluorescence;Optical Diagnostics for Thin Film Processing;1996
3. Theoretical studies on the chloride ALE process;Applied Surface Science;1994-12
4. Pulsed laser etching of silicon: Dopant profile modification and dopant desorption induced by surface melting;Journal of Applied Physics;1994-09
5. Theoretical study ofAs2desorption from the Ga dangling-bond site;Physical Review B;1994-02-15
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