Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures-Reference-Cited by-同舟云学术

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

Published:2018-01-21 Issue:3 Volume:123 Page:033906
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zube Christian¹,Malindretos Joerg¹,Watschke Lars¹,Zamani Reza R.¹^ORCID,Disterheft David¹,Ulbrich Rainer G.¹,Rizzi Angela¹,Iza Michael²,Keller Stacia²,DenBaars Steven P.²^ORCID

Affiliation:

1. IV. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany

2. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000348

Reference23 articles.

1. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

2. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

3. Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes

4. Variable range hopping transport in ferromagnetic GaGdN epitaxial layers

5. A. Bedoya-Pinto , “ Structural, magnetic and electrical transport properties of GaN-based magnetic semiconductors and hybrid structures,” Ph.D. thesis ( Georg-August-Universität Göttingen, 2010).

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