Stokes shift in semi-polar ( 112¯2) InGaN/GaN multiple quantum wells
Author:
Affiliation:
1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4940396
Reference22 articles.
1. Semipolar GaN grown on foreign substrates: a review
2. Solid phase immiscibility in GaInN
3. III-nitride semiconductors for intersubband optoelectronics: a review
4. GaN and InGaN(112̱2) surfaces: Group-III adlayers and indium incorporation
5. Mechanism of luminescence in InGaN/GaN multiple quantum wells
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