Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1593213
Reference13 articles.
1. Epitaxial Lateral Overgrowth of GaN
2. Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction
3. Combining high-resolution X-ray diffractometry and topography
4. Multicrystal X-ray diffraction of heteroepitaxial structures
5. Elastic Constants of Single‐Crystal Indium Phosphide
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3. Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration;Future Directions in Silicon Photonics;2019
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