Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2187513
Reference22 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. InN, latest development and a review of the band-gap controversy
3. InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization
4. The characterization of InN growth under high-pressure CVD conditions
5. Real-time optical monitoring of ammonia flow and decomposition kinetics under high-pressure chemical vapor deposition conditions
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, Compositional, and Thermal Stability Studies on In0.96ga0.04n Epilayers Grown by High Pressure Chemical Vapor Deposition;SSRN Electronic Journal;2022
2. Influence of plasma-activated nitrogen species on PA-MOCVD of InN;Applied Physics Letters;2019-11-25
3. Hydrogen adsorbed at N-polar InN: Significant changes in the surface electronic properties;Physical Review B;2015-06-12
4. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-03
5. 9.7.3 Semiconductor;Physics of Solid Surfaces;2015
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3