Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114361
Reference7 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells;Applied Physics Letters;2015-10-12
2. Graphene-capped InAs/GaAs quantum dots;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-03
3. Photoluminescence of InAs quantum dots grown on GaAs surface;Applied Physics Letters;2000-10-30
4. Layer perfection in ultrathin InAs quantum wells in GaAs(001);Physical Review B;2000-01-15
5. Optical properties versus growth conditions of CdTe submonolayers inserted in ZnTe quantum wells;Physical Review B;1998-12-15
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