Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3493115
Reference27 articles.
1. Exciton fine structure in undoped GaN epitaxial films
2. Intrinsic exciton transitions in GaN
3. Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
4. Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films
5. Effective masses and valence-band splittings in GaN and AlN
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