Properties of Ba(Mg1/3Ta2/3)O3 thin films prepared by metalorganic solution deposition technique for microwave applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122090
Reference12 articles.
1. Microwave Dielectric Properties forBa(Mg1/3Ta2/3)O3–A(Mg1/2W1/2)O3(A=Ba, Sr, and Ca) Ceramics
2. Ba(Zn1/3Ta2/3)O3 Ceramics with Low Dielectric Loss at Microwave Frequencies
3. Preparation of Ba(Mg1/3Nb2/3)O3 ceramics as microwave dielectrics through alkoxide-hydroxide route
4. Ba(Mg, Ta)O3-BaSnO3High-Q Dielectric Resonator
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2. Structural and High Frequency Dielectric Properties of Ba(ZrxTi1-x)O3 Films Prepared by Reactive Magnetron Sputtering Using Metal Targets;13th International Ceramics Congress - Part D;2014-10-31
3. Preparation and characterization of Ba(ZrxTi1−x)O3thin films for high-frequency applications;Japanese Journal of Applied Physics;2014-09-01
4. Probing phase formation and structural ordering in Ba3ZnNb2O9 films using confocal Raman microscopy;Vibrational Spectroscopy;2014-05
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