Effect of Cr concentration on resistance switching in Cr-doped SrZrO3 films and surface accumulation of Cr ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3499626
Reference18 articles.
1. Reproducible switching effect in thin oxide films for memory applications
2. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
3. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
4. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
5. 13th International Workshop on Oxide Electronics;La Mattina F.,2006
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1. Single-Crystalline SrTiO3 as Memristive Model System: From Materials Science to Neurological and Psychological Functions;Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations;2021-10-16
2. Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions;Journal of Electroceramics;2017-04-27
3. Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control;Scientific Reports;2015-06-09
4. Interface-related switching behaviors of amorphous Pr 0.67 Sr 0.33 MnO 3 -based memory cells;Chinese Physics B;2012-10
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