Interface-related switching behaviors of amorphous Pr 0.67 Sr 0.33 MnO 3 -based memory cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference28 articles.
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4. Electric-pulse-induced reversible resistance change effect in magnetoresistive films
5. Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes
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