Sub-bandgap optical spectroscopy of epitaxial β-Ga2O3 thin films-Reference-Cited by-同舟云学术

Sub-bandgap optical spectroscopy of epitaxial β-Ga2O3 thin films

Published:2020-03-02 Issue:9 Volume:116 Page:092102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hao Sijie¹,Hetzl Martin¹,Kunzelmann Viktoria F.¹,Matich Sonja¹,Sai Qinglin²,Xia Changtai²,Sharp Ian D.¹,Stutzmann Martin¹^ORCID

Affiliation:

1. Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4 85748 Garching, Germany

2. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, People's Republic of China

Funder

Deutsche Forschungsgemeinschaft

Technische Universität München

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5143393

Reference41 articles.

1. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Electron mobility in single‐ and polycrystalline Ga2O3

4. Growth and characterization of β-Ga2O3 thin films on different substrates

5. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

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