Built‐in biaxial strain dependence of Γ‐Xtransport in GaAs/InxAl1−xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)-Reference-Cited by-同舟云学术

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Built‐in biaxial strain dependence of Γ‐Xtransport in GaAs/InxAl1−xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)

Published:1994-12-15 Issue:12 Volume:76 Page:7907-7914
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yang K.,East J. R.,Haddad G. I.,Drummond T. J.,Brennan T. M.,Hammons B. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.357901

Reference31 articles.

1. Resonant tunneling in semiconductor double barriers

2. Frequency limit of double‐barrier resonant‐tunneling oscillators

3. Observation of millimeter‐wave oscillations from resonant tunneling diodes and some theoretical considerations of ultimate frequency limits

4. Heterojunction double‐barrier diodes for logic applications

5. Perpendicular transport across (Al,Ga)As and the Γ to X transition

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al-As-In (Aluminium-Arsenic-Indium);Non-Ferrous Metal Systems. Part 1;2006

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