Stabilization of orthorhombic phase in single-crystal ZnSnN2 films-Reference-Cited by-同舟云学术

Stabilization of orthorhombic phase in single-crystal ZnSnN2 films

Published:2016-07 Issue:7 Volume:6 Page:075019
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Senabulya Nancy¹^ORCID,Feldberg Nathaniel²,Makin Robert. A.³,Yang Yongsoo⁴,Shi Guangsha⁵,Jones Christina M.¹^ORCID,Kioupakis Emmanouil⁵,Mathis James¹^ORCID,Clarke Roy¹⁴,Durbin Steven M.³

Affiliation:

1. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Department of Physics, University at Buffalo, Buffalo, New York 14260, USA

3. Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, Michigan, 49008-5329, USA

4. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA

5. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

Schlumberger Faculty for the Future Grant

National Science Foundation (NSF)

Division of Graduate Education (DGE)

Division of Earth Sciences (EAR)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4960109

Reference24 articles.

1. Band-gap control of GaInP using Sb as a surfactant

2. Bandgap engineering of ZnSnP2 for high-efficiency solar cells

3. Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2

4. Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2

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