In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2789691
Reference18 articles.
1. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
2. MBE Growth of (In)GaN for LED Applications
3. Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
4. Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
5. Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
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