A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121135
Reference13 articles.
1. Pressure measurement by GaAs piezoelectric sensors
2. A piezoresistive GaAs pressure sensor with GaAs/AlGaAs membrane technology
3. Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors
4. Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
5. Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
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