Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

Abstract

The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. Here, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near-zero magnetic field. Spin blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ∼0.1 found for a magnetic field parallel to the direction [Formula: see text] is approximately a factor of four lower than that for comparable circuits fabricated from a material grown on widely employed standard (001) GaAs substrates and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates.