Spin relaxation in n-modulation doped GaAs/AlGaAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Room-Temperature Spin Memory in Two-Dimensional Electron Gases
2. A silicon-based nuclear spin quantum computer
3. Bulk Spin-Resonance Quantum Computation
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1. Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well;Journal of Applied Physics;2022-04-07
2. Room-temperature spin relaxation in a (110)-oriented GaAs/AlGaAs superlattice with tunnel-coupled quantum wells;Applied Physics Express;2020-11-23
3. Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells;Physics Letters A;2018-05
4. Gate-voltage-induced switching of the Rashba spin-orbit interaction in a composition-adjusted quantum well;Physical Review B;2017-01-03
5. Gapped tripletp-wave superconductivity in strong spin-orbit-coupled semiconductor quantum wells in proximity tos-wave superconductor;Physical Review B;2016-05-11
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