Evidence for strong spatially localized band-filling effects at interface islands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119335
Reference6 articles.
1. Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy
2. Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption
3. Optical investigation of the exciton transfer between growth islands of different well widths in GaAs/AlxGa1−xAs quantum wells
4. Interfaces in GaAs/AlAs quantum well structures
5. Spatially localized band-gap renormalization and band-filling effects in three growth-interrupted multiple asymmetric coupled narrow quantum wells
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