Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95848
Reference6 articles.
1. Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices
2. High mobilities in AlxGa1−xAs‐GaAs heterojuntions
3. Enhanced mobility in inverted AlxGa1−xAs/GaAs heterojunctions: binary on top of ternary
4. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
5. Theory of photoluminescence line shape due to interfacial quality in quantum well structures
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