Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot-Reference-Cited by-同舟云学术

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Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

Published:2011-12-05 Issue:23 Volume:99 Page:233108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shi Zhan,Simmons C. B.,Prance J. R.,King Gamble John,Friesen Mark,Savage D. E.,Lagally M. G.,Coppersmith S. N.,Eriksson M. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3666232

Reference32 articles.

1. Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot

2. Tunable Spin Loading andT1of a Silicon Spin Qubit Measured by Single-Shot Readout

3. Single-shot readout of an electron spin in silicon

4. Charge offset stability in tunable-barrier Si single-electron tunneling devices

5. Charge Sensing and Controllable Tunnel Coupling in a Si/SiGe Double Quantum Dot

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