Reduction of crystalline disorder in molecular beam epitaxy GaAs on Si by MeV ion implantation and subsequent annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350627
Reference8 articles.
1. Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy
2. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
3. Growth of high quality GaAs layers on Si substrates by MOCVD
4. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
5. Effect ofinsituandexsituannealing on dislocations in GaAs on Si substrates
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1. The impact of morphology upon the radiation hardness of ZnO layers;Nanotechnology;2008-04-23
2. Characterization of radiation damage annealing of recoil-implanted GaP;Materials Characterization;2007-07
3. Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing;Journal of Applied Physics;2000-12-15
4. The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring;Applied Physics Letters;1997-02-17
5. Improvement of InP crystalline perfection by He+-implantation and subsequent annealing;Solid State Communications;1995-12
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